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Wolfspeed SiC wide bandgap semiconductors outperform conventional silicon components. We are setting new standards in applications from aerospace to industrial.
oxide/p-type silicon Schottky barrier diode by solgel method
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High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomenaTsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara
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Marco Narettos 6 research works with 23 citations and 637 reads, including: Barrier Inhomogeneities of a Medium Size Mo/4H-SiC Schottky Diode publish
Cree’s New 650V Silicon Carbide Schottky Diodes Improve
Cree is a market-leading innovator of semiconductor products for power and radio-frequency (RF) applications, lighting-class LEDs, and LED Lighting. Cree
C3D08065I PDF - Cree : Silicon Carbide Schottky Diode (1-
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Diodes Incorporated BAT54 SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES Vishay Siliconix BAT54-02V-GS08 Schottky Diode in SOD-523 BAT54-02V-GS
C3D02060–Silicon Carbide Schottky Diode
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manu Page:1==Silicon Carbide Schottky Diode==[CREE] pdf
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C4D10120A Silicon Carbide Schottky Diode Z-Rec Rectifier - PDF
C4D1 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 1 V ( =135) = 16 Q c = 52 nc Features Package 1.2kV Schottky Rectifier Zero Reverse
GaN Schottky Barrier Diodes with TiN Electrode for Microwave
In this study, TiN anode GaN Schottky barrier diodes (SBDs) with a low access sheet resistance of 28 Ω/□ were fabricated for microwave power