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pA study of Pt ohmic contacts with Si interlayers on p-type SiC (7.0×10sup18/sup cmsup−3/sup) was performed as a function of

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on properties of hexagonal polytype silicon carbide crystals

Effect of doping on properties of hexagonal polytype silicon carbide crystals Authors: Chung, Hun Jae Affiliation: AA(Carnegie Mellon University)

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